Polyfet RF Devices manufactures broadband, High Power Mosfet RF Transistors and compact RF broadband amplifier modules. The technology bases for the transistors are Silicon Gate Vertical and Lateral DMOSFETs; and Gallium Aluminum Nitride (GAN). They introduced their first generation of VDMOS devices in 1985, followed by the release of their LDMOS devices in 1996. The second generation of VDMOS devices was released in 2002. 2011 is when they launched the line of GAN devices to the market. The line of power modules employs both D-MOS and GAN devices as appropriate. The products are well established in the industry as the company have a long history supporting both military and commercial applications.